gmf05c-hs3 document number 85654 rev. 1.8, 23-sep-08 vishay semiconductors www.vishay.com 1 19957 1 19956 1 2 3 6 54 for technical support, please contact: esd-protection@vishay.com 5-line esd protection diode array in llp75-6a features ? ultra compact llp75-6a package ? 5-line esd-protection ? surge immunity acc. iec 61000-4-5 i ppm > 12 a ? low leakage current i r < 1 a ? esd-immunity acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? working voltage range v rwm = 5 v ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) ordering information package data * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 21001 xx yy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gmf05c-hs3 GMF05C-HS3-GS08 3000 15000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions gmf05c-hs3 llp75-6a f5 5.2 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals
www.vishay.com 2 document number 85654 rev. 1.8, 23-sep-08 gmf05c-hs3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com absolute maximum ratings bias -mode (5-line bi directional as ymmetrical protection mode) with the gmf05c-hs3 up to 5 signal- or data-lines (l1 - l5) can be protected against voltage transients. with pin 2 connected to ground and pin 1; 3 up tp pin 6 connec ted to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified m aximum r everse w orking v oltage ( v rwm ) the protection diode between data line and ground offer a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the tr ansient current to ground. now the protection device behaves like a closed switch. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level plus the voltage drop at the series impedance (res istance and inductance) of the protection device. any negative transient signal will be clamped accordingly. t he negative transient curr ent is flowing in the forward direction of the protection diode. the low f orward v oltage ( v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the gmf05c-hs3 clamping behaviour is bi directional and as ymmetrical ( bias ). rating test condition symbol value unit peak pulse current bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 12 a peak pulse power bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 200 w esd immunity acc. iec61000-4-2; 10 pulses bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2) contact discharge v esd 30 kv air discharge v esd 30 kv operating temperature junction temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c l4 l1 l5 l2 l3 20739 1 2 5 4 3 3
gmf05c-hs3 document number 85654 rev. 1.8, 23-sep-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified gmf05c-hs3 bias mode: each input (pin 1; 3 - pin 6) to ground (pin 2) if a higher surge current or p eak p ulse current ( i pp ) is needed, some protection diodes in the gmf05c-hs3 can also be used in parallel in order to "multiply" the performance. if two diodes are switched in parallel you get ? double surge power = double peak pulse current (2 x i ppm ) ? half of the line inductance = reduced clamping voltage ? half of the line resistance = reduced clamping voltage ? double line c apacitance (2 x c d ) ? double r everse leakage current (2 x i r ) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line wh ich can be protected n lines 5 lines reverse working voltage at i r = 1 a v rwm 5v reverse current at v r = v rwm = 5 v i r < 0.1 1 a reverse breakdown voltage at i r = 1 ma v br 68v reverse clamping voltage at i pp = 12 a acc. iec 61000-4-5 v c 12.5 v at i pp = 1 a acc. iec 61000-4-5 v c 7.8 9.5 v forward clamping voltage at i f = 12 a acc. iec 61000-4-5 v f 5.5 v at i pp = 1 a acc. iec 61000-4-5 v f 1.5 v capacitance at v r = 0 v; f = 1 mhz c d 126 150 pf at v r = 2.5 v; f = 1 mhz c d 76 pf l1 l2 l3 20740 1 3 6 5 4 2
www.vishay.com 4 document number 85654 rev. 1.8, 23-sep-08 gmf05c-hs3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) figure 2. 8/20 s peak pulse current wave form (acc. iec 61000-4-5) figure 3. typical capacitance c d vs. reverse voltage v r 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 20 40 60 8 0 100 120 140 0123456 f = 1 mhz bias-mode v r ( v ) c d (pf) 21204 figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r figure 6. typical peak clamping voltage v c vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 bias-mode v f ( v ) i f (ma) 21205 0 1 2 3 4 5 6 7 0.01 0.1 1 10 100 1000 10000 bias-mode i r ( a) v r ( v ) 21206 0 2 4 6 8 10 12 14 0246 8 10 12 14 16 v c meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) bias-mode i pp (a) v c ( v ) 21207
gmf05c-hs3 document number 85654 rev. 1.8, 23-sep-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com figure 7. typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) figure 9. typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 60 - 40 - 20 0 20 40 60 8 0 - 10 0 10 20 30 40 50 60 70 8 090 t (ns) v c-esd ( v ) 2120 8 acc. iec 61000-4-2 + 8 k v contact discharge - 8 0 - 60 - 40 - 20 0 20 40 60 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge t (ns) v c-esd ( v ) 21209 - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 0 5 10 15 20 25 30 acc. iec 61000-4-2 contact discharge v c-esd positi v e discharge negati v e discharge v esd (k v ) v c-esd ( v ) 21210
www.vishay.com 6 document number 85654 rev. 1.8, 23-sep-08 gmf05c-hs3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com package dimensions in millimeters (inches): llp75-6a 1 8 05 8
gmf05c-hs3 document number 85654 rev. 1.8, 23-sep-08 vishay semiconductors www.vishay.com 7 for technical support, please contact: esd-protection@vishay.com ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vis hay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
llp75-6a document number 84020 rev. 1.2, 07-dec-06 vishay semiconductors www.vishay.com 1 llp75-6a package dimensions in mm (inches) 18058
www.vishay.com 2 document number 84020 rev. 1.2, 07-dec-06 llp75-6a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international sta tutory requirements. 2. regularly and cont inuously improve the performance of our products, processes, distribution a nd operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate relea ses of those subst ances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendment s (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuo us improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depletin g substances in the clean air act amendmen ts of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/ 540/eec and 91/690 /eec annex a, b and c (transit ional substances) respectively. vishay semiconductor gmbh can ce rtify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make ch anges to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconduct ors products for any unintended or unaut horized application, th e buyer shall indemnify vish ay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirect ly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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